1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c90 t c = 90 c15a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t j = 125 c, r g = 10 i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ge = 720 v; v ge = 15 v, r g = 10 10 s non repetitive p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247) 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering (to-268) 260 c weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1.0 ma, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 36v i ces v ce = 0.8 ? v ces 50 a note 1 t j = 125 c 2.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90, v ge = 15 v 3.0 3.4 v note 2 t j = 125 c 2.8 v features high blocking voltage epitaxial silicon drift region - fast switching - small tail current - low switching losses mos gate turn-on for drive simplicity molding epoxies meet ul 94 v-0 flammability classification applications ac motor speed control dc servo and robot drives uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies dc choppers 98652a (7/00) to-247 ad (ixsh) (tab) to-268 (ixst) (tab) g e i c25 = 30 a v ces = 1200 v v ce(sat) = 3.4 v g c e high voltage igbt "s" series - improved scsoa capability ixys reserves the right to change limits, test conditions, and dimensions. preliminary data ixsh 15n120b ixst 15n120b
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 7 9.5 s note 2 c ies 1400 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 98 pf c res 37 pf q g 57 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 14 nc q gc 25 nc t d(on) 30 ns t ri 25 ns t d(off) 148 300 ns t fi 126 250 ns e off 1.5 2.9 mj t d(on) 30 ns t ri 25 ns e on 1.1 mj t d(off) 265 ns t fi 298 ns e off 3.1 mj r thjc 0.83 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v r g = 10 v ce = 0.8 v ces note 3 inductive load, t j = 25 c i c = i c90 , v ge = 15 v r g = 10 v ce = 0.8 v ces note 3 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g . ixsh 15n120b ixst 15n120b to-247 ad (ixsh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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